Frequency-tuning radiofrequency plasma source operated in inductively-coupled mode under a low magnetic field

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8 Citations (Scopus)

Abstract

A radiofrequency (rf) inductively-coupled plasma source is operated with a frequency-tuning impedance matching system, where the rf frequency is variable in the range of 20-50 MHz and the maximum power is 100 W. The source consists of a 45 mm-diameter pyrex glass tube wound by an rf antenna and a solenoid providing a magnetic field strength in the range of 0-200 Gauss. A reflected rf power for no plasma case is minimized at the frequency of ∼25 MHz, whereas the frequency giving the minimum reflection with the high density plasma is about 28 MHz, where the density jump is observed when minimizing the reflection. A high density argon plasma above 1×1012 cm-3 is successfully obtained in the source for the rf power of 50-100 W, where it is observed that an external magnetic field of a few tens of Gauss yields the highest plasma density in the present configuration. The frequency-tuning plasma source is applied to a compact and high-speed silicon etcher in an Ar-SF6 plasma; then the etching rate of 8 μm min-1 is obtained for no bias voltage to the silicon wafer, i.e. for the case that a physical ion etching process is eliminated.

Original languageEnglish
Article number265201
JournalJournal of Physics D: Applied Physics
Volume50
Issue number26
DOIs
Publication statusPublished - 2017 Jun 13

Keywords

  • impedance tuning
  • rf plasma
  • silicon etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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