Frequency performance of plasma wave devices for thz applications and the role of fringing effects

Irina Khmyrova, Takuya Nishimura, Nobuhiro Magome, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Paper is focused on the model in which reduction of resonant frequency of plasma oscillations in the HEMT channel experimentally observed is associated with the gate contact fringing effects. Sheet electron density distribution in the fringed ungated channel region and expression for the resonant plasma frequency are obtained. Cascaded transmission line equivalent circuit model accounting for both gated and fringed ungated channel regions has been developed and used for simulation of HEMT frequency performance with IsSpice software.

Original languageEnglish
Title of host publication2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008
Pages650-653
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008 - Eilat, Israel
Duration: 2008 Dec 32008 Dec 5

Publication series

NameIEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

Other

Other2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008
CountryIsrael
CityEilat
Period08/12/308/12/5

Keywords

  • Cascaded TL model
  • Fringing effects
  • HEMT
  • Plasma oscillations
  • Resonant frequency

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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