Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization

T. Kosugi; Y. Umeda; T. Suemitsu; T. Enoki; Y. Yamane

doi:10.1143/jjap.40.2725

Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization

T. Kosugi, Y. Umeda, T. Suemitsu, T. Enoki, Y. Yamane

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We investigated the frequency dispersion in drain conductance of 0.1-μm-gate InAlAs/InGaAs high-electron mobility transisters under various bias conditions in a frequency range from 9 kHz to 500 MHz using a network analyzer. The substrate current was monitored from the backside of the wafer as a measure of the impact ionization rate. The relationship between the frequency dispersion and the impact ionization is explained quite well by the model we employed here. According to the model, the extrinsic transconductance of the device is the main factor governing the frequency dispersion of the drain conductance.

Original language	English
Pages (from-to)	2725-2727
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.40.2725
Publication status	Published - 2001 Apr
Externally published	Yes

Keywords

Drain conductance
Frequency dispersion
HEMT
Impact ionization
InAlAs/InGaAs
Optical communication systems
Substrate current
Transconductance

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.2725

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Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization. / Kosugi, T.; Umeda, Y.; Suemitsu, T. et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 04.2001, p. 2725-2727.

Research output: Contribution to journal › Article › peer-review

Kosugi, T, Umeda, Y, Suemitsu, T, Enoki, T & Yamane, Y 2001, 'Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 B, pp. 2725-2727. https://doi.org/10.1143/jjap.40.2725

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keywords = "Drain conductance, Frequency dispersion, HEMT, Impact ionization, InAlAs/InGaAs, Optical communication systems, Substrate current, Transconductance",

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AU - Enoki, T.

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KW - Drain conductance

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KW - HEMT

KW - Impact ionization

KW - InAlAs/InGaAs

KW - Optical communication systems

KW - Substrate current

KW - Transconductance

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Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization

Abstract

Keywords

ASJC Scopus subject areas

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