Frequency dispersion and damping mechanisms of terahertz plasmons in graphene transistor structures

A. Satou, V. Ryzhii, F. T. Vasko, V. V. Mitin, T. Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We numerically study frequency dispersion and damping mechanisms of plasmons in graphene transistor structures. We investigate the gate-voltage tunability of plasmon frequencies and the damping due to the carrier scattering with disorders and acoustic phonons.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO:QELS FS 2013
PagesJTh2A.33
Publication statusPublished - 2013 Nov 21
EventCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

NameCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013

Other

OtherCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Satou, A., Ryzhii, V., Vasko, F. T., Mitin, V. V., & Otsuji, T. (2013). Frequency dispersion and damping mechanisms of terahertz plasmons in graphene transistor structures. In CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 (pp. JTh2A.33). (CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013).