TY - JOUR
T1 - Freestanding GaN resonant gratings at telecommunication range
AU - Wang, Yongjin
AU - Hu, Fangren
AU - Wakui, Masashi
AU - Hane, Kazuhiro
N1 - Funding Information:
Manuscript received March 09, 2009; revised May 20, 2009. First published June 02, 2009; current version published August 12, 2009. This work was supported by the Research Project, Grant-In-Aid for Scientific Research under Grant 19106007. The work of Y. Wang was supported by the Japan Society for the Promotion of Science (JSPS).
PY - 2009/9/1
Y1 - 2009/9/1
N2 - We theoretically and experimentally demonstrate a freestanding gallium nitride (GaN) resonant grating at telecommunication range. The optical responses of the freestanding GaN resonant gratings are analyzed by the rigorous coupled-wave analysis method. The freestanding GaN resonant gratings are validated on 850-nm freestanding membrane by a combination of electron beam lithography, fast atom beam, etching, and deep reactive ion etching. The polarization properties of such freestanding GaN resonant gratings are demonstrated in reflectance measurements, and the experimental results correspond well to the theoretical model. The strong resonant peaks show a clear dependence on the duty ratio under transverse magnetic polarization, and a promising resonant peak of the fabricated freestanding GaN resonant grating, in which the grating period P is 1500 nm, the grating height h is 230 nm, and the grating width is 280 nm, is observed at 1516.4 nm with a full-width at half-maximum of 4 nm.
AB - We theoretically and experimentally demonstrate a freestanding gallium nitride (GaN) resonant grating at telecommunication range. The optical responses of the freestanding GaN resonant gratings are analyzed by the rigorous coupled-wave analysis method. The freestanding GaN resonant gratings are validated on 850-nm freestanding membrane by a combination of electron beam lithography, fast atom beam, etching, and deep reactive ion etching. The polarization properties of such freestanding GaN resonant gratings are demonstrated in reflectance measurements, and the experimental results correspond well to the theoretical model. The strong resonant peaks show a clear dependence on the duty ratio under transverse magnetic polarization, and a promising resonant peak of the fabricated freestanding GaN resonant grating, in which the grating period P is 1500 nm, the grating height h is 230 nm, and the grating width is 280 nm, is observed at 1516.4 nm with a full-width at half-maximum of 4 nm.
KW - Electron beam lithography
KW - Etching
KW - Gallium compounds
KW - Resonator filters
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U2 - 10.1109/LPT.2009.2024221
DO - 10.1109/LPT.2009.2024221
M3 - Article
AN - SCOPUS:69649097341
VL - 21
SP - 1184
EP - 1186
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 17
ER -