Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Y. Hoshi, M. Higuchi, H. Iso, M. Sakamoto, K. Ooyama, H. Yuta, K. Abe, K. Hasegawa, F. Suekane, N. Kawamura, M. Neichi, K. Suzuki, K. Masuda, R. Kikuchi, K. Miyano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium'. Together they form a unique fingerprint.

Chemistry

Earth and Planetary Sciences

Engineering

Material Science