Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Y. Hoshi, M. Higuchi, H. Iso, M. Sakamoto, K. Ooyama, H. Yuta, K. Abe, K. Hasegawa, F. Suekane, N. Kawamura, M. Neichi, K. Suzuki, K. Masuda, R. Kikuchi, K. Miyano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

Original languageEnglish
Pages (from-to)532-536
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume40
Issue number4
DOIs
Publication statusPublished - 1993 Aug

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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