Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Y. Hoshi; M. Higuchi; H. Iso; M. Sakamoto; K. Ooyama; H. Yuta; K. Abe; K. Hasegawa; F. Suekane; N. Kawamura; M. Neichi; K. Suzuki; K. Masuda; R. Kikuchi; K. Miyano

doi:10.1109/23.256615

Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Y. Hoshi, M. Higuchi, H. Iso, M. Sakamoto, K. Ooyama, H. Yuta, K. Abe, K. Hasegawa, F. Suekane, N. Kawamura, M. Neichi, K. Suzuki, K. Masuda, R. Kikuchi, K. Miyano

Research Center for Neutrino Science (RCNS)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

Original language	English
Pages (from-to)	532-536
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	40
Issue number	4
DOIs	https://doi.org/10.1109/23.256615
Publication status	Published - 1993 Aug

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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abstract = "Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12{\AA}, 173±16{\AA}, respectively, including the impurity effect in liquid.",

author = "Y. Hoshi and M. Higuchi and H. Iso and M. Sakamoto and K. Ooyama and H. Yuta and K. Abe and K. Hasegawa and F. Suekane and N. Kawamura and M. Neichi and K. Suzuki and K. Masuda and R. Kikuchi and K. Miyano",

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TY - JOUR

T1 - Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

AU - Hoshi, Y.

AU - Higuchi, M.

AU - Iso, H.

AU - Sakamoto, M.

AU - Ooyama, K.

AU - Yuta, H.

AU - Abe, K.

AU - Hasegawa, K.

AU - Suekane, F.

AU - Kawamura, N.

AU - Neichi, M.

AU - Suzuki, K.

AU - Masuda, K.

AU - Kikuchi, R.

AU - Miyano, K.

PY - 1993/8

Y1 - 1993/8

N2 - Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

AB - Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

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Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Abstract

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