Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane' Doping

Hideo Ohno, Eiji Ikeda, Hideki Hasegawa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Synthesis of free carrier profiles in GaAs by metalorganic chemical vapor deposition is realized by `atomic-plane' doping, in which growth is suspended while doping gas is introduced. Silicon, which stays on the surface even without GaAs growth, is used as a dopant for the `atomic-plane' doping.

Original languageEnglish
Pages (from-to)L369-L370
JournalJapanese journal of applied physics
Volume23
Issue number6
DOIs
Publication statusPublished - 1984 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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