Fracture toughness of the interface between CVD diamond film and silicon substrate in the relation with methane concentration in the source gas mixture

H. Takahashi, S. Kamiya, M. Saka, H. Abé

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Diamond films produced by chemical vapor deposition (CVD) have been reported to show various excellent properties. However, low toughness of diamond films, especially the interface between the films and substrates, has been a severe problem. In order to find the dominant factors to control the adhesive strength of CVD diamond films, we obtained diamond films with various crystalline structures deposited on silicon (100) substrates under various methane concentrations in the source gas mixture. The toughness of the interface between the diamond film and silicon substrate was evaluated for the first time by a recently developed method. The toughness showed an interesting behavior with respect to the variation of methane concentration. The obtained results were quantitatively compared to the data already obtained for the case of CVD diamond particles deposited on silicon substrates.

Original languageEnglish
Pages (from-to)760-764
Number of pages5
JournalDiamond and Related Materials
Volume10
Issue number3-7
DOIs
Publication statusPublished - 2001 Mar

Keywords

  • CVD diamond
  • Diamond properties and applications
  • Film
  • Toughness of interface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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