Forming semiconductor/dielectric double layers by one-step spin-coating for enhancing the performance of organic field-effect transistors

Chuan Liu, Yun Li, Takeo Minari, Kazuo Takimiya, Kazuhito Tsukagoshi

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We report one-step formation of the gate dielectric and conduction channel for enhancing the performance of organic field effect transistors (OFETs). The resulting OFET with the semiconductor/dielectric bi-layers spun in ambient conditions exhibits μFET up to 1.6 cm2/V s and on-off ratio higher than 106, no additional treatment needed. Contact angle measurements and absorption spectra reveals that a well-defined semiconductor-top and dielectric-bottom film form after spin-coating the mixture of the two components, which is due to the surface induced self-organized phase separation. Compared to the single layer semiconductor film, the staggered film exhibits over 5 times higher mobility and nearly 90% reduced hysteresis in OFET. The higher performance is attributed to the simultaneous optimization in the dielectric interface and semiconductor crystallization. The approach is significant for the fabrication of low cost, easy processed and high performance OFETs.

Original languageEnglish
Pages (from-to)1146-1151
Number of pages6
JournalOrganic Electronics
Volume13
Issue number7
DOIs
Publication statusPublished - 2012 Jul
Externally publishedYes

Keywords

  • Crystal sizes
  • Interface modification
  • Organic field-effect transistor
  • Performance enhancement
  • Small molecule semiconductor
  • Spin-coating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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