@article{4253a2f45ced4ea39c147c12860a833d,
title = "Forming-free colossal resistive switching effect in rare-earth-oxide Gd2 O3 films for memristor applications",
abstract = "The reproducible forming-free resistive switching (RS) behavior in rare-earth-oxide Gd2 O3 polycrystalline thin film was demonstrated. The characteristic of this forming-free RS was similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance state (LRS). An ultrahigh resistance switching ratio from HRS to LRS of about six to seven orders of magnitude was achieved at a bias voltage of 0.6 V. Mechanism analysis indicated that the existence of metallic Gd in the Gd2 O3 films plays an important role in the forming-free RS performance. Our work provides a novel material with interesting RS behavior, which is beneficial to deepen our understanding of the origin of RS phenomenon.",
author = "Xun Cao and Xiaomin Li and Xiangdong Gao and Weidong Yu and Xinjun Liu and Yiwen Zhang and Lidong Chen and Xinhong Cheng",
note = "Funding Information: This work was sponsored by the Ministry of Science and Technology of China through the Hi-Tech Research and Development Program of China (Grant No. 2006AA03Z308), the Natural Science Foundation of Shanghai (Grant No. 08ZR1421500), the Keystone Project of Shanghai Basic Research Program (Grant No. 08JC1420600), and the Shanghai-AM Research and Development Fund (Grant No. 08700740900). Table I. Comparison of resistance states dispersion between different RRAM materials. RRAM materials Forming process R L (Ω) R H (Ω) Δ R L (Ω) Δ R L ∕ ( R HA − R LA ) Ref. Gd 2 O 3 No 10–25 3 × 10 6 – 10 8 15 2.9 × 10 − 7 This work ZnO No 100–120 3 × 10 3 – 10 4 20 9.35 × 10 − 4 15 Zr O 2 Yes 5 × 10 3 – 2.5 × 10 5 10 7 – 10 8 2.45 × 10 5 4.46 × 10 − 3 21 Ti O 2 Yes 10–30 10 4 – 10 6 20 3.96 × 10 − 5 22 FIG. 1. XRD patterns of Gd 2 O 3 films deposited on the Pt ∕ Ti ∕ Si O 2 ∕ Si substrates. ( C and M denote cubic and monoclinic phase of Gd 2 O 3 , respectively). FIG. 2. (a) Typical I - V characteristics of RRAM device cell based on the Pt ∕ Gd 2 O 3 ∕ Pt sandwiched structures. The inset shows switching cycling characteristics for the HRS and LRS at RT as measured at 0.1 V. (b) The retention characteristics of both resistance states at RT and 85 °C, respectively. FIG. 3. The conducting mechanism is Ohmic behavior in double logarithmic plot. The inset shows that the conducting mechanism of HRS in high voltage region is PF emission by curve fitting. FIG. 4. Forming-necessary resistive switching behavior was found in Gd 2 O 3 film, which was deposited under oxygen pressure of 1 Pa. “1–3” denote the forming, reset, and set processes, respectively. FIG. 5. (a) XPS spectra of Gd 4 d 3 ∕ 2 , 4 d 5 ∕ 2 and Gd 3 + 4 d 3 ∕ 2 , 4 d 5 ∕ 2 . (b) SAED pattern of the Gd 2 O 3 film in TEM mode. (c) Schematic diagram for resistance switching mechanism in Gd 2 O 3 thin films. (1)–(3) for forming-free performance and (4)–(7) for forming-necessary performance. ",
year = "2009",
doi = "10.1063/1.3236573",
language = "English",
volume = "106",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}