Formation processes of the Au/Si (111)-γ(√3 × √3)R30° surface

Takuya Kadohira, Keiji Nishida, Akihisa Nakagawa, Shingo Matsuo, Toyoaki Eguchi, Toshiaki Osaka

Research output: Contribution to journalArticle

Abstract

We have investigated formation processes of the γ (√3 × √3) R30° (γ√3) reconstructed surface for the Au/Si (111) system by using Auger electron spectroscopy, reflection high energy electron diffraction and scanning tunneling microscopy. Depositing Au onto the Si (111) - (7 × 7) substrate at a temperature of 600°C, we have successfully obtained the well-defined γ√3 surface with a single domain, which is extremely flat at an atomic scale. On the basis of the analysis of the surface composition, we have demonstrated that one monolayer of Au constitutes the γ√3 surface. Furthermore, it has been revealed that excess Au atoms at the surface contribute not to the formation of the surface reconstruction but to that of the liquid islands of Au.

Original languageEnglish
Pages (from-to)347-351
Number of pages5
JournalShinku/Journal of the Vacuum Society of Japan
Volume46
Issue number4
DOIs
Publication statusPublished - 2003

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Kadohira, T., Nishida, K., Nakagawa, A., Matsuo, S., Eguchi, T., & Osaka, T. (2003). Formation processes of the Au/Si (111)-γ(√3 × √3)R30° surface. Shinku/Journal of the Vacuum Society of Japan, 46(4), 347-351. https://doi.org/10.3131/jvsj.46.347