Copper indium diselenide (CuInSe2:CIS) pn-homojunction diodes were fabricated by the thermal diffusion of Zn into the p-type CIS films at 300 °C for 5 min using a dimethylzinc [(CH3)2Zn:DMZn] vapor. This method does not require any additional processing equipment since the diffusion can be carried out subsequent to the selenization of a Cu-In precursor using organoselenium liquid, such as diethylselenide [(C2H5)2Se:DESe]. A donor-to-acceptor pair emission attributable to Zn impurity was observed in the low-temperature photoluminescence spectrum. From the capacitance-voltage characteristics, the depletion layer width and diffusion potential of the junction were estimated as 300 nm and 0.6-0.7 V, respectively. The method is highly advantageous for the development of low-cost solar modules.
- A1. Growth models
- A3. Physical vapor deposition processes
- B2. Semiconducting ternary compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry