Formation of Zn defects in willemite-type Zn2 GeO4 during supercooled liquid-crystal phase transition

Yoshihiro Takahashi; Masataka Ando; Rie Ihara; Takumi Fujiwara

doi:10.1063/1.3597300

Formation of Zn defects in willemite-type Zn₂ GeO₄ during supercooled liquid-crystal phase transition

Yoshihiro Takahashi, Masataka Ando, Rie Ihara, Takumi Fujiwara

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn₂ GeO₄ via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn₂ GeO ₄ nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn₂ GeO₄ structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

Original language	English
Article number	221907
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3597300
Publication status	Published - 2011 May 30

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Formation of Zn defects in willemite-type Zn2 GeO4 during supercooled liquid-crystal phase transition",

abstract = "This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.",

author = "Yoshihiro Takahashi and Masataka Ando and Rie Ihara and Takumi Fujiwara",

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AU - Takahashi, Yoshihiro

AU - Ando, Masataka

AU - Ihara, Rie

AU - Fujiwara, Takumi

N1 - Funding Information: This work was supported by the Ministry of Education, Culture, Sports, Science, and Technology of Japan. The authors thank Dr. Takamichi Miyazaki (Tohoku University) for his significant contributions to this letter.

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N2 - This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

AB - This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

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Formation of Zn defects in willemite-type Zn₂ GeO₄ during supercooled liquid-crystal phase transition

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