Formation of Zn defects in willemite-type Zn2 GeO4 during supercooled liquid-crystal phase transition

Yoshihiro Takahashi, Masataka Ando, Rie Ihara, Takumi Fujiwara

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11 Citations (Scopus)

Abstract

This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

Original languageEnglish
Article number221907
JournalApplied Physics Letters
Volume98
Issue number22
DOIs
Publication statusPublished - 2011 May 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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