Formation of various epitaxial nanodots in Si films for thermoelectric materials

S. Sakane, K. Watanabe, T. Fujita, N. Naruse, Y. Nakamrua

Research output: Contribution to journalConference articlepeer-review

Abstract

Nanostructures are expected to enhance thermoelectric properties of Si-based materials. For enhancement, the simultaneous achievement of low κ and high σ is required. In our previous study, we have demonstrated drastic reduction of κ in Si by introducing epitaxial connected Si NDs resulting in the smallest κ in Si. We have also reported that Si films containing Ge NDsexhibited the bulk-like σ and the drastic κ reduction compared with that of bulk Si. However, S was not controlled in this nanostructure. In general, introduction of interfaces or high S materials can increase S of the total film. In addition to control of κ and σ, S can be controlled by tuning the material and size of NDs. In this work, we developed the formation method of the various material and size of introduced NDs.

Original languageEnglish
Article number012135
JournalJournal of Physics: Conference Series
Volume1052
Issue number1
DOIs
Publication statusPublished - 2018 Jul 26
Event17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2017 - Kanazawa, Japan
Duration: 2017 Nov 142017 Nov 17

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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