Nanostructures are expected to enhance thermoelectric properties of Si-based materials. For enhancement, the simultaneous achievement of low κ and high σ is required. In our previous study, we have demonstrated drastic reduction of κ in Si by introducing epitaxial connected Si NDs resulting in the smallest κ in Si. We have also reported that Si films containing Ge NDsexhibited the bulk-like σ and the drastic κ reduction compared with that of bulk Si. However, S was not controlled in this nanostructure. In general, introduction of interfaces or high S materials can increase S of the total film. In addition to control of κ and σ, S can be controlled by tuning the material and size of NDs. In this work, we developed the formation method of the various material and size of introduced NDs.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2018 Jul 26|
|Event||17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2017 - Kanazawa, Japan|
Duration: 2017 Nov 14 → 2017 Nov 17
ASJC Scopus subject areas
- Physics and Astronomy(all)