TY - JOUR
T1 - Formation of various epitaxial nanodots in Si films for thermoelectric materials
AU - Sakane, S.
AU - Watanabe, K.
AU - Fujita, T.
AU - Naruse, N.
AU - Nakamrua, Y.
N1 - Funding Information:
This work was supported by JST-CREST program, Grant-in-Aid for Scientific Research A (16H02078), Grant-in-Aid for Exploratory Research (15K13276).
Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2018/7/26
Y1 - 2018/7/26
N2 - Nanostructures are expected to enhance thermoelectric properties of Si-based materials. For enhancement, the simultaneous achievement of low κ and high σ is required. In our previous study, we have demonstrated drastic reduction of κ in Si by introducing epitaxial connected Si NDs resulting in the smallest κ in Si. We have also reported that Si films containing Ge NDsexhibited the bulk-like σ and the drastic κ reduction compared with that of bulk Si. However, S was not controlled in this nanostructure. In general, introduction of interfaces or high S materials can increase S of the total film. In addition to control of κ and σ, S can be controlled by tuning the material and size of NDs. In this work, we developed the formation method of the various material and size of introduced NDs.
AB - Nanostructures are expected to enhance thermoelectric properties of Si-based materials. For enhancement, the simultaneous achievement of low κ and high σ is required. In our previous study, we have demonstrated drastic reduction of κ in Si by introducing epitaxial connected Si NDs resulting in the smallest κ in Si. We have also reported that Si films containing Ge NDsexhibited the bulk-like σ and the drastic κ reduction compared with that of bulk Si. However, S was not controlled in this nanostructure. In general, introduction of interfaces or high S materials can increase S of the total film. In addition to control of κ and σ, S can be controlled by tuning the material and size of NDs. In this work, we developed the formation method of the various material and size of introduced NDs.
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U2 - 10.1088/1742-6596/1052/1/012135
DO - 10.1088/1742-6596/1052/1/012135
M3 - Conference article
AN - SCOPUS:85051348166
VL - 1052
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012135
T2 - 17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2017
Y2 - 14 November 2017 through 17 November 2017
ER -