Formation of uo2 thin film by laser ablation and its electrical properties

Nobuaki Sato, Migaku Arata, Takeo Fujino

Research output: Contribution to journalArticlepeer-review

Abstract

Uranium dioxide thin films were deposited on quartz infstrates by laser ablation of UO2 target using Nd:YAG pulsed laser. The thickness of the film increased with increasing energy, repetition time and irradiation time of laser. The crystallinity of the films was studied by X-ray diffractometry, which showed only a small broad peak at around 2?= 28º corresponding to the strongest peak of UO2. After the heat treatment of the film in H2 at 1273K, however, more peaks for UO2 phase were observed: the crystallinity of the film was improved by the heat treatment. The specific resistivity of the UO2 thin films measured by the four-probe van der Pauw method was of the order of 10-4? m at temperatures between 40 to 300 K and it decreased with increasing temperature. In case of the H2-treated film, the resistivity was comparable with that of bulk UO2.

Original languageEnglish
Pages (from-to)660-663
Number of pages4
Journaljournal of nuclear science and technology
Volume39
DOIs
Publication statusPublished - 2002 Jan 1

Keywords

  • Ablation
  • Electrical conductivity
  • Laser
  • Thin film
  • Uranium dioxide

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering

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