Formation of Ti-Al-N films by an activated reactive evaporation (ARE) method

Yukio Ide, Kazunori Inada, Takashi Nakamura, Masafumi Maeda

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5 Citations (Scopus)


Ti-Al-N films were deposited using an activated reactive evaporation (ARE) method with single vapor source of Ti-Al alloys. The behavior of some species excited and ionized in the plasma and a relationship between these reacting species and important operating parameters of ARE such as a probe voltage were investigated by optical emission spectroscopy(OES) and mass spectrometry(MS). The films were characterized by XRD, EPMA and AES. A high temperature oxidation of Ti-Al-N films were studied in air at temperatures from 600 to 1000°C. The results were summarized as follows. (1) Each of emission lines from titanium, aluminum and nitrogen by OES could be detected without interferences. (2) Since TiN+ was observed by MS during TiN and Ti-Al-N film formation, TiN was considered to be synthesized in the plasma. (3) The Ti/Al ratios of Ti-Al-N films analyzed by EPMA showed a good correlation to the Ti/Al ratios monitored by OES and MS respectively. (4) The resistivity to oxidation of Ti-Al-N films increased with increasing AI content in the films.

Original languageEnglish
Pages (from-to)98-105
Number of pages8
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number1
Publication statusPublished - 1998


  • Activated reactive evaporation
  • Hard coating
  • Mass spectrometry
  • Optical emission spectroscopy
  • Oxidation
  • Titanium aluminum nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry


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