Formation of thin SiGe virtual substrates by ion implantation into Si substrates

K. Sawano, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, Y. Shiraki

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.

    Original languageEnglish
    Pages (from-to)99-103
    Number of pages5
    JournalApplied Surface Science
    Issue number1-4
    Publication statusPublished - 2004 Mar 15


    • Ion implantation
    • Molecular beam epitaxy
    • SiGe
    • Strain relaxation

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Fingerprint Dive into the research topics of 'Formation of thin SiGe virtual substrates by ion implantation into Si substrates'. Together they form a unique fingerprint.

    Cite this