TY - JOUR
T1 - Formation of thin SiGe virtual substrates by ion implantation into Si substrates
AU - Sawano, K.
AU - Koh, S.
AU - Hirose, Y.
AU - Hattori, T.
AU - Nakagawa, K.
AU - Shiraki, Y.
N1 - Funding Information:
The authors wish to acknowledge S. Otake for his technical support. This work was supported in part by a Grant-in-Aid for Scientific Research on Priority (No. 11232202) from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2004/3/15
Y1 - 2004/3/15
N2 - Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.
AB - Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.
KW - Ion implantation
KW - Molecular beam epitaxy
KW - SiGe
KW - Strain relaxation
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U2 - 10.1016/j.apsusc.2003.08.093
DO - 10.1016/j.apsusc.2003.08.093
M3 - Article
AN - SCOPUS:1142304536
VL - 224
SP - 99
EP - 103
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -