Formation of thin SiGe virtual substrates by ion implantation into Si substrates

K. Sawano, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, Y. Shiraki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.

Original languageEnglish
Pages (from-to)99-103
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Mar 15
Externally publishedYes


  • Ion implantation
  • Molecular beam epitaxy
  • SiGe
  • Strain relaxation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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