Formation of thin SiGe virtual substrates by ion implantation into Si substrates

K. Sawano; S. Koh; Y. Hirose; T. Hattori; K. Nakagawa; Y. Shiraki

doi:10.1016/j.apsusc.2003.08.093

Formation of thin SiGe virtual substrates by ion implantation into Si substrates

K. Sawano, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si _0.65 Ge _0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.

Original language	English
Pages (from-to)	99-103
Number of pages	5
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.093
Publication status	Published - 2004 Mar 15

Keywords

Ion implantation
Molecular beam epitaxy
SiGe
Strain relaxation

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = " Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.",

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author = "K. Sawano and S. Koh and Y. Hirose and T. Hattori and K. Nakagawa and Y. Shiraki",

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T1 - Formation of thin SiGe virtual substrates by ion implantation into Si substrates

AU - Sawano, K.

AU - Koh, S.

AU - Hirose, Y.

AU - Hattori, T.

AU - Nakagawa, K.

AU - Shiraki, Y.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.

AB - Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100 nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on the implanted Si is very different from that of the conventional buffer, suggesting that a new strain relaxation mechanism takes place in the SiGe film grown on the ion implanted Si.

KW - Ion implantation

KW - Molecular beam epitaxy

KW - SiGe

KW - Strain relaxation

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