Abstract
A damage-free and low-temperature neutral beam oxidation (NBO) process is used to directly form a thin germanium dioxide (GeO2) film. A GeO2 film with only a small amount of suboxide is formed even at a low substrate temperature of 300 °C because of the extremely low-activation-energy oxidation owing to bombardment with 5-eV-energy oxygen neutral beams. We combined the NBO process with hydrogen radical native oxide removal treatment to form high-quality GeO2 films, and our fabricated Al2O3/GeO2/Ge gate stack has an extremely low interface state density (Dit) of less than 1 × 1011 cm-2 eV-1.
| Original language | English |
|---|---|
| Article number | 125603 |
| Journal | Japanese journal of applied physics |
| Volume | 51 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2012 Dec 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Wada, A., Zhang, R., Takagi, S., & Samukawa, S. (2012). Formation of thin germanium dioxide film with a high-quality interface using a direct neutral beam oxidation process. Japanese journal of applied physics, 51(12), [125603]. https://doi.org/10.1143/JJAP.51.125603