TY - JOUR
T1 - Formation of thin germanium dioxide film with a high-quality interface using a direct neutral beam oxidation process
AU - Wada, Akira
AU - Zhang, Rui
AU - Takagi, Shinichi
AU - Samukawa, Seiji
PY - 2012/12
Y1 - 2012/12
N2 - A damage-free and low-temperature neutral beam oxidation (NBO) process is used to directly form a thin germanium dioxide (GeO2) film. A GeO2 film with only a small amount of suboxide is formed even at a low substrate temperature of 300 °C because of the extremely low-activation-energy oxidation owing to bombardment with 5-eV-energy oxygen neutral beams. We combined the NBO process with hydrogen radical native oxide removal treatment to form high-quality GeO2 films, and our fabricated Al2O3/GeO2/Ge gate stack has an extremely low interface state density (Dit) of less than 1 × 1011 cm-2 eV-1.
AB - A damage-free and low-temperature neutral beam oxidation (NBO) process is used to directly form a thin germanium dioxide (GeO2) film. A GeO2 film with only a small amount of suboxide is formed even at a low substrate temperature of 300 °C because of the extremely low-activation-energy oxidation owing to bombardment with 5-eV-energy oxygen neutral beams. We combined the NBO process with hydrogen radical native oxide removal treatment to form high-quality GeO2 films, and our fabricated Al2O3/GeO2/Ge gate stack has an extremely low interface state density (Dit) of less than 1 × 1011 cm-2 eV-1.
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U2 - 10.1143/JJAP.51.125603
DO - 10.1143/JJAP.51.125603
M3 - Article
AN - SCOPUS:84872559252
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
M1 - 125603
ER -