Formation of thin germanium dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A damage-free and low-temperature neutral beam oxidation (NBO) process is used to directly form a thin germanium dioxide (GeO2) film. A GeO2 film with only a small amount of suboxide is formed even at a low substrate temperature of 300 °C because of the extremely low-activation-energy oxidation owing to bombardment with 5-eV-energy oxygen neutral beams. We combined the NBO process with hydrogen radical native oxide removal treatment to form high-quality GeO2 films, and our fabricated Al2O3/GeO2/Ge gate stack has an extremely low interface state density (Dit) of less than 1 × 1011 cm-2 eV-1.

Original languageEnglish
Article number125603
JournalJapanese journal of applied physics
Volume51
Issue number12
DOIs
Publication statusPublished - 2012 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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