Stacking-fault tetrahedra (SFT) are typical vacancy clusters in fcc metals. SFT have been, however, considered to be unstable in aluminum because of its high stacking-fault energy, until the recent finding of SFT in thin aluminum foils subjected to a tensile fracture. This study confirmed that SFT form in aluminum following irradiation with high-energy particles. In electron irradiation, SFT with an average size of 2 nm formed below 203 K, while a larger irradiation intensity at lower temperature induced SFT with a larger number density. Irradiation with 60-keV Al>+ ions induced SFT below room temperature, although the defect yield (the ratio of the number of defect clusters to the number of incident ions) was about 10-3, considerably smaller than that in the other fcc pure metals. With neutron irradiation below 15 K to a fluence of 2×1021neutrons m-2, SFT were not observed at room temperature. Instead, dislocation loops were observed to form and to disappear during observation with 120-kV electrons that do not cause atomic displacements. Tensile fracture of aluminum thin foil induced SFT at up to 400 K, which is close to the temperature at which SFT become unstable in isochronal annealing experiments. These results suggest that a high concentration of vacancies at lower temperature tends to cause SFT to form rather than vacancy-type dislocation loops in aluminum.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2004|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics