Formation of Si3N4 during the direct nitridation of Si single crystal

Akio Shinmi, Jun Ichi Koike, Shoichi Kimura, Kouichi Maruyama, Hiroshi Oikawa

Research output: Contribution to journalArticlepeer-review

Abstract

Single crystal Si was nitrided in a fluidized-bed reactor. The volume fraction of the α/β phases and the nitridation process were studied by X-ray diffraction and electron microscopy. No difference in the α/β ratio and the nitridation rate were found between pure Si single crystal and commercial Si powder including impurities. This indicates that the α/β ratio is not affected by the impurity content. Microstructural observation revealed the internal fracture of Si to several-micron pieces and the formation of Si3N4 needles in the early stage of nitridation. Pores were also observed in the fractured Si pieces and the size increased with the progress of nitridation. Aggregation of Si3N4 in a band shape and a group of dislocations, forming small angle boundaries, were also observed in the Si piece. The fracture of the Si single crystal appears to be caused by segregation of nitrogen along dislocations, introduced during fluidization, and subsequent formation of Si3N4.

Original languageEnglish
Pages (from-to)662-667
Number of pages6
JournalJournal of the Ceramic Society of Japan
Volume104
Issue number7
DOIs
Publication statusPublished - 1996

Keywords

  • Fluidized-bed reactor
  • Microstructure
  • Nitridation
  • SiN
  • Single crystal Si

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Formation of Si<sub>3</sub>N<sub>4</sub> during the direct nitridation of Si single crystal'. Together they form a unique fingerprint.

Cite this