Formation of single domain Si(001)4 × 3-In surface by surface electromigration

S. Kono, T. Goto, M. Shimomura, T. Abukawa

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

The formation of single-domain Si(001)4 × 3-In surfaces with several degrees of domain ratio is reported. A single-domain Si(001)2 × 1 surface was used as a substrate. A single-domain Si(001)3 × 4-In surface with a good domain ratio is found, the directional relationship of which is such that the threefold direction of 3 × 4-In corresponds to the twofold direction of substrate. Two other 4 × 3-In surfaces with poor domain ratios are found, the directional relationship of which is such that the fourfold direction corresponds to the twofold direction of substrate. The formation of these 4 × 3-In surfaces is explained by the electromigration of surface Si, the amount of which is dependent on the temperature of direct current annealing.

Original languageEnglish
Pages (from-to)83-90
Number of pages8
JournalSurface Science
Volume438
Issue number1-3
DOIs
Publication statusPublished - 1999 Sep 10
EventProceedings of the 1998 International Symposium on Surface and Interface: Properties of Different Symmetry Crossing 98 (ISSI PDSC-98) - Tokyo, Jpn
Duration: 1998 Nov 191998 Nov 21

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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