Formation of silicon hollow spheres via electromagnetic levitation method under static magnetic field in hydrogen-argon mixed gas

S. Ueno, H. Kobatake, H. Fukuyama, S. Awaji, H. Nakajima

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A formation mechanism of a silicon hollow sphere via electromagnetic levitation method under high static magnetic field in hydrogen atmosphere is discussed in this paper. Since the convection in the levitated silicon melt which is caused by the electromagnetic field is restrained by a high static magnetic field, it is possible to examine a solidification of silicon from an equilibrium silicon melt with hydrogen except an effect of convection. The solidified silicon sphere has an extrusion which is formed during the solidification due to reduced stress in the melt. When a nucleation of pore occurs before the formation of the extrusion, a silicon hollow sphere is formed. Since the chance to form the nucleation of pore increases with increasing hydrogen concentration in the melt, a silicon hollow sphere is formed when the solidification is performed in higher hydrogen partial pressure. In the present case, a silicon hollow sphere is formed by the solidification in 50%H2-50%Ar atmosphere. However, non-porous silicon spheres are formed by the solidification in 25%H2-75%Ar or 100%Ar atmosphere.

Original languageEnglish
Pages (from-to)602-604
Number of pages3
JournalMaterials Letters
Volume63
Issue number6-7
DOIs
Publication statusPublished - 2009 Mar 15

Keywords

  • Electromagnetic levitation
  • Hollow sphere
  • Silicon
  • Static magnetic field

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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