@inproceedings{3c9b64c177cb4695b3c43e6709b6137b,
title = "FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH.",
abstract = "Two possible solutions to the problem of nucleus growth encountered in lateral solid phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO//2 acts as the driving force behind preferential nucleation. Utilization of underlying Si//3N//4 films eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed of 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket eV right bracket ) was obtained during high temperature annealing ( greater than equivalent to 1000 C).",
author = "M. Miyao and M. Moniwa and T. Warabisako and H. Sunami and T. Tokuyama",
year = "1985",
month = dec,
day = "1",
language = "English",
isbn = "0931837006",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "705--709",
editor = "D.K. Biegelsen and Shank, {Charles V.}",
booktitle = "Materials Research Society Symposia Proceedings",
}