FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH.

M. Miyao; M. Moniwa; T. Warabisako; H. Sunami; T. Tokuyama

FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH.

M. Miyao, M. Moniwa, T. Warabisako, H. Sunami, T. Tokuyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two possible solutions to the problem of nucleus growth encountered in lateral solid phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO//2 acts as the driving force behind preferential nucleation. Utilization of underlying Si//3N//4 films eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed of 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket eV right bracket ) was obtained during high temperature annealing ( greater than equivalent to 1000 C).

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Editors	D.K. Biegelsen, Charles V. Shank
Publisher	Materials Research Soc
Pages	705-709
Number of pages	5
ISBN (Print)	0931837006
Publication status	Published - 1985 Dec 1

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	35
ISSN (Print)	0272-9172

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH. / Miyao, M.; Moniwa, M.; Warabisako, T.; Sunami, H.; Tokuyama, T.

Materials Research Society Symposia Proceedings. ed. / D.K. Biegelsen; Charles V. Shank. Materials Research Soc, 1985. p. 705-709 (Materials Research Society Symposia Proceedings; Vol. 35).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Two possible solutions to the problem of nucleus growth encountered in lateral solid phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO//2 acts as the driving force behind preferential nucleation. Utilization of underlying Si//3N//4 films eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed of 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket eV right bracket ) was obtained during high temperature annealing ( greater than equivalent to 1000 C).

AB - Two possible solutions to the problem of nucleus growth encountered in lateral solid phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO//2 acts as the driving force behind preferential nucleation. Utilization of underlying Si//3N//4 films eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed of 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket eV right bracket ) was obtained during high temperature annealing ( greater than equivalent to 1000 C).

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M3 - Conference contribution

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FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH.

Abstract

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