Two possible solutions to the problem of nucleus growth encountered in lateral solid phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO//2 acts as the driving force behind preferential nucleation. Utilization of underlying Si//3N//4 films eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed of 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket eV right bracket ) was obtained during high temperature annealing ( greater than equivalent to 1000 C).