FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH.

M. Miyao, M. Moniwa, T. Warabisako, H. Sunami, T. Tokuyama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Two possible solutions to the problem of nucleus growth encountered in lateral solid phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO//2 acts as the driving force behind preferential nucleation. Utilization of underlying Si//3N//4 films eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed of 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket eV right bracket ) was obtained during high temperature annealing ( greater than equivalent to 1000 C).

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposia Proceedings
    EditorsD.K. Biegelsen, Charles V. Shank
    PublisherMaterials Research Soc
    Pages705-709
    Number of pages5
    ISBN (Print)0931837006
    Publication statusPublished - 1985 Dec 1

    Publication series

    NameMaterials Research Society Symposia Proceedings
    Volume35
    ISSN (Print)0272-9172

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Fingerprint Dive into the research topics of 'FORMATION OF Si-ON-INSULATOR STRUCTURE UNDER SOLID PHASE GROWTH.'. Together they form a unique fingerprint.

    Cite this