FORMATION OF SI-ON-INSULATOR STRUCTURE BY LATERAL SOLID PHASE EPITAXIAL GROWTH WITH LOCAL P-DOPING.

Masahiro Moniwa; M. Miyao; T. Warabisako; K. Kusukawa; E. Murakami; S. Shukuri

FORMATION OF SI-ON-INSULATOR STRUCTURE BY LATERAL SOLID PHASE EPITAXIAL GROWTH WITH LOCAL P-DOPING.

Masahiro Moniwa, M. Miyao, T. Warabisako, K. Kusukawa, E. Murakami, S. Shukuri

Research output: Contribution to journal › Conference article › peer-review

Abstract

Lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO//2 has been reported recently. A novel process is proposed that enlarges the L-SPE area by local p doping of the a-Si films. The largest undoped L-SPE silicon-on-insulator (SOI) area reported to date was obtained. Raman measurements indicated that stress in L-SPE SOI is much smaller than that in CW-laser-annealed SOI and silicon-on-sapphire (SOS). MOSFETs were successfully fabricated on L-SPE SOI. The L-SPE process has the advantages over other techniques of low temperature and small stress and can be used to form large-area SOI with acceptable electrical properties.

Original language	English
Pages (from-to)	89-90
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1987 Dec 1

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "FORMATION OF SI-ON-INSULATOR STRUCTURE BY LATERAL SOLID PHASE EPITAXIAL GROWTH WITH LOCAL P-DOPING.",

abstract = "Lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO//2 has been reported recently. A novel process is proposed that enlarges the L-SPE area by local p doping of the a-Si films. The largest undoped L-SPE silicon-on-insulator (SOI) area reported to date was obtained. Raman measurements indicated that stress in L-SPE SOI is much smaller than that in CW-laser-annealed SOI and silicon-on-sapphire (SOS). MOSFETs were successfully fabricated on L-SPE SOI. The L-SPE process has the advantages over other techniques of low temperature and small stress and can be used to form large-area SOI with acceptable electrical properties.",

author = "Masahiro Moniwa and M. Miyao and T. Warabisako and K. Kusukawa and E. Murakami and S. Shukuri",

year = "1987",

month = dec,

day = "1",

language = "English",

pages = "89--90",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - FORMATION OF SI-ON-INSULATOR STRUCTURE BY LATERAL SOLID PHASE EPITAXIAL GROWTH WITH LOCAL P-DOPING.

AU - Moniwa, Masahiro

AU - Miyao, M.

AU - Warabisako, T.

AU - Kusukawa, K.

AU - Murakami, E.

AU - Shukuri, S.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - Lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO//2 has been reported recently. A novel process is proposed that enlarges the L-SPE area by local p doping of the a-Si films. The largest undoped L-SPE silicon-on-insulator (SOI) area reported to date was obtained. Raman measurements indicated that stress in L-SPE SOI is much smaller than that in CW-laser-annealed SOI and silicon-on-sapphire (SOS). MOSFETs were successfully fabricated on L-SPE SOI. The L-SPE process has the advantages over other techniques of low temperature and small stress and can be used to form large-area SOI with acceptable electrical properties.

AB - Lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO//2 has been reported recently. A novel process is proposed that enlarges the L-SPE area by local p doping of the a-Si films. The largest undoped L-SPE silicon-on-insulator (SOI) area reported to date was obtained. Raman measurements indicated that stress in L-SPE SOI is much smaller than that in CW-laser-annealed SOI and silicon-on-sapphire (SOS). MOSFETs were successfully fabricated on L-SPE SOI. The L-SPE process has the advantages over other techniques of low temperature and small stress and can be used to form large-area SOI with acceptable electrical properties.

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