FORMATION OF SI-ON-INSULATOR STRUCTURE BY LATERAL SOLID PHASE EPITAXIAL GROWTH WITH LOCAL P-DOPING.

Masahiro Moniwa, M. Miyao, T. Warabisako, K. Kusukawa, E. Murakami, S. Shukuri

    Research output: Contribution to journalConference articlepeer-review

    3 Citations (Scopus)

    Abstract

    Lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO//2 has been reported recently. A novel process is proposed that enlarges the L-SPE area by local p doping of the a-Si films. The largest undoped L-SPE silicon-on-insulator (SOI) area reported to date was obtained. Raman measurements indicated that stress in L-SPE SOI is much smaller than that in CW-laser-annealed SOI and silicon-on-sapphire (SOS). MOSFETs were successfully fabricated on L-SPE SOI. The L-SPE process has the advantages over other techniques of low temperature and small stress and can be used to form large-area SOI with acceptable electrical properties.

    Original languageEnglish
    Pages (from-to)89-90
    Number of pages2
    JournalDigest of Technical Papers - Symposium on VLSI Technology
    Publication statusPublished - 1987 Dec 1

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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