Lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO//2 has been reported recently. A novel process is proposed that enlarges the L-SPE area by local p doping of the a-Si films. The largest undoped L-SPE silicon-on-insulator (SOI) area reported to date was obtained. Raman measurements indicated that stress in L-SPE SOI is much smaller than that in CW-laser-annealed SOI and silicon-on-sapphire (SOS). MOSFETs were successfully fabricated on L-SPE SOI. The L-SPE process has the advantages over other techniques of low temperature and small stress and can be used to form large-area SOI with acceptable electrical properties.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1987 Dec 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering