Formation of Si islands from amorphous thin films upon thermal annealing

Yutaka Wakayama, Takashi Tagami, Shun Ichiro Tanaka

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


The mechanism of crystalline Si island formation from an amorphous film was discussed in relation to the free energy of the Si/SiO2 system. Agglomeration of the Si crystallite occurred forming islands, thus preventing a further increase in free energy. Crystal growth proceeded in two steps. At first, the size distribution of Si islands was unimodal but finally became bimodal during the crystallization process.

Original languageEnglish
Pages (from-to)8492-8494
Number of pages3
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 1999 Jun 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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