Formation of semi-insulating layers on semiconducting β-Ga 2O3 single crystals by thermal oxidation

Takayoshi Oshima, Kenichi Kaminaga, Akira Mukai, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Shizuo Fujita, Akira Ohtomo

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26 Citations (Scopus)


Semi-insulating layers (SIL) were formed on the surfaces of nominally undoped β-Ga2O3 (010) single crystals by thermal oxidation. Capacitance- voltage measurement with double Schottky configuration was performed to evaluate the increase in the thickness of the SIL as a function of annealing temperature and time. A SiO2 layer prepared on the surface prevented the extension of the SIL, indicating that oxygen incorporation from air and successive bulk diffusion dominated the carrier compensation process. The activation energy of oxygen diffusion coefficient was estimated to be 4.1 eV.

Original languageEnglish
Article number051101
JournalJapanese journal of applied physics
Issue number5 PART 1
Publication statusPublished - 2013 May
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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