Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer

Hideki Nakazawa, Maki Suemitsu

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The formation of quasi-single-domain 3C-SiC films on nominally on-axis Si substrate was discussed. The starting surface was either of 2×1 + 1×2 double-domain or 2×1 quasi-single-domain. DC resistive heating of the substrates was used to form a low temperature interfacial buffer layer using monomethylsilane. The surface reconstruction of the starting surface determined the dominant domain in the 3C-SiC film.

Original languageEnglish
Pages (from-to)5282-5286
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number9
DOIs
Publication statusPublished - 2003 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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