Abstract
The formation of quasi-single-domain 3C-SiC films on nominally on-axis Si substrate was discussed. The starting surface was either of 2×1 + 1×2 double-domain or 2×1 quasi-single-domain. DC resistive heating of the substrates was used to form a low temperature interfacial buffer layer using monomethylsilane. The surface reconstruction of the starting surface determined the dominant domain in the 3C-SiC film.
| Original language | English |
|---|---|
| Pages (from-to) | 5282-5286 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2003 May 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Nakazawa, H., & Suemitsu, M. (2003). Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer. Journal of Applied Physics, 93(9), 5282-5286. https://doi.org/10.1063/1.1564861