Abstract
The formation of quasi-single-domain 3C-SiC films on nominally on-axis Si substrate was discussed. The starting surface was either of 2×1 + 1×2 double-domain or 2×1 quasi-single-domain. DC resistive heating of the substrates was used to form a low temperature interfacial buffer layer using monomethylsilane. The surface reconstruction of the starting surface determined the dominant domain in the 3C-SiC film.
Original language | English |
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Pages (from-to) | 5282-5286 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2003 May 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)