Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer

Hideki Nakazawa; Maki Suemitsu

doi:10.1063/1.1564861

Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer

Hideki Nakazawa, Maki Suemitsu

Information Devices Division

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28 Citations (Scopus)

Abstract

The formation of quasi-single-domain 3C-SiC films on nominally on-axis Si substrate was discussed. The starting surface was either of 2×1 + 1×2 double-domain or 2×1 quasi-single-domain. DC resistive heating of the substrates was used to form a low temperature interfacial buffer layer using monomethylsilane. The surface reconstruction of the starting surface determined the dominant domain in the 3C-SiC film.

Original language	English
Pages (from-to)	5282-5286
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	9
DOIs	https://doi.org/10.1063/1.1564861
Publication status	Published - 2003 May 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1564861

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AU - Suemitsu, Maki

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Y1 - 2003/5/1

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AB - The formation of quasi-single-domain 3C-SiC films on nominally on-axis Si substrate was discussed. The starting surface was either of 2×1 + 1×2 double-domain or 2×1 quasi-single-domain. DC resistive heating of the substrates was used to form a low temperature interfacial buffer layer using monomethylsilane. The surface reconstruction of the starting surface determined the dominant domain in the 3C-SiC film.

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Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer

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