The formation of quasi-single-domain 3C-SiC films on nominally on-axis Si substrate was discussed. The starting surface was either of 2×1 + 1×2 double-domain or 2×1 quasi-single-domain. DC resistive heating of the substrates was used to form a low temperature interfacial buffer layer using monomethylsilane. The surface reconstruction of the starting surface determined the dominant domain in the 3C-SiC film.
ASJC Scopus subject areas
- Physics and Astronomy(all)