Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)

Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Formation of epitaxial graphene (EG) on 3C-SiC films heteroepitaxially grown on Si substrates, otherwise known as graphene-on-silicon (GOS) technology, has a high potential in future nanocarbon-based electronics. The EG's quality in GOS however remains mediocre due mostly to the high density of crystal defects in the 3C-SiC/Si films caused by the large (~ 20%) lattice-mismatch between Si and 3C-SiC crystals. Resultant Si out-diffusion along the planar defects during the higherature (~ 1525 K) graphitization annealing can also account for the degradation. Here we propose a two-step growth technique that consists of seeding of rotated 3C-SiC(-1-1-1) crystallites on the Si(110) substrate, conducted in the higherature-low-pressure regime, followed by a rapid growth of SiC films in the lowerature-high-pressure regime. We succeeded in forming an almost lattice-relaxed 3C-SiC(-1-1-1) film on Si(110), having a sufficient thickness (~ 200 nm) that we believe is able to suppress the Si out-diffusion during graphitization. A graphitization annealing applied to this epi-film yields an EG, whose domain size is increased by 60% as compared to that of conventional GOS films.

Original languageEnglish
Pages (from-to)51-53
Number of pages3
JournalDiamond and Related Materials
Volume67
DOIs
Publication statusPublished - 2016 Aug 1

Keywords

  • 3C-SiC
  • Epitaxial graphene
  • Gas-source MBE
  • Heteroepitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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