Formation of p-n junctions in double-walled carbon nanotubes by a plasma ion-irradiation method

Y. F. Li, R. Hatakeyama, T. Kaneko, K. Tohji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the transport properties of double-walled carbon nanotubes (DWNTs) encapsulating various molecules or atoms, via a plasma-ion irradiation method. Our measurements indicate that it is possible to make p-n junctions in DWNTs by adjusting the filling levels and types of encapsulated electron dopants.

Original languageEnglish
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages243-246
Number of pages4
DOIs
Publication statusPublished - 2008 Nov 10
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: 2008 Aug 182008 Aug 21

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Other

Other2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Country/TerritoryUnited States
CityArlington, TX
Period08/8/1808/8/21

Keywords

  • Carbon nanotubes
  • Diode
  • Electronic property
  • Encapsualtion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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