Formation of Mn oxide with thermal CVD and its diffusion barrier property between Cu and SiO2

Koji Neishi, Shiro Aki, Jun Iijirna, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A manganese oxide layer was formed by thermal chemical vapor deposition(CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. The thickness of the Mn oxide layer could be varied 2.6 to 10 nm depending on deposition temperature. Heat-treated samples of PVD Cu / CVD Mn oxide /SiO 2 indicated no interdiffusion. The CVD Mn oxide was found to be a good diffusion barrier layer.

Original languageEnglish
Title of host publicationMaterials and Processes for Advanced Interconnects for Microelectronics
Pages30-34
Number of pages5
Publication statusPublished - 2008 Dec 1
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1079
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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