Formation of indium-tin oxide ohmic contacts for β-Ga2O3

Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi, Makoto Kasu

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20 Citations (Scopus)

Abstract

Sputter-deposited indium-tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga2O3(010) substrates with a carrier concentration of 2 × 1017 cm-3 after rapid thermal annealing in a wide range of annealing temperatures of 900-1150 °C. The formation of an ohmic contact is attributed to interdiffusion between ITO and β-Ga2O3, as evidenced by the results of transmission electron microscopy and energydispersive X-ray spectroscopy. The interdiffusion decreases the band gap and increases the donor concentration of β-Ga2O3 at the interface, and forms an intermediate semiconductor layer desirable for carrier transport. The ITO ohmic contact is particularly useful for future β-Ga2O3 devices operated at high temperatures.

Original languageEnglish
Article number1202B7
JournalJapanese journal of applied physics
Volume55
Issue number12
DOIs
Publication statusPublished - 2016 Dec

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Oshima, T., Wakabayashi, R., Hattori, M., Hashiguchi, A., Kawano, N., Sasaki, K., Masui, T., Kuramata, A., Yamakoshi, S., Yoshimatsu, K., Ohtomo, A., Oishi, T., & Kasu, M. (2016). Formation of indium-tin oxide ohmic contacts for β-Ga2O3. Japanese journal of applied physics, 55(12), [1202B7]. https://doi.org/10.7567/JJAP.55.1202B7