TY - JOUR
T1 - Formation of high quality silicon nitride films using microwave excitation plasma
AU - Teramoto, Akinobu
AU - Aratani, Takashi
AU - Higuchi, Masaaki
AU - Ikenaga, Eiji
AU - Hirayama, Masaki
AU - Sugawa, Shigetoshi
AU - Hattori, Takeo
AU - Ohmi, Tadahiro
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - The electric characteristics Si3N4 films the interface characteristics of Si3N4/Si formed by newly developed microwave-excited highdensity plasma are described. The leakage current through the Si3N4 films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO2 films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si3N4 films have more excellent performance compared to that with conventional SiO2 films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si3N4/Si interface. The subnitride at Si 3N4/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si 3N4/Si interface is independent of a silicon wafer surface. Si3N4 films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.
AB - The electric characteristics Si3N4 films the interface characteristics of Si3N4/Si formed by newly developed microwave-excited highdensity plasma are described. The leakage current through the Si3N4 films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO2 films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si3N4 films have more excellent performance compared to that with conventional SiO2 films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si3N4/Si interface. The subnitride at Si 3N4/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si 3N4/Si interface is independent of a silicon wafer surface. Si3N4 films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.
UR - http://www.scopus.com/inward/record.url?scp=39049096782&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=39049096782&partnerID=8YFLogxK
U2 - 10.3131/jvsj.50.659
DO - 10.3131/jvsj.50.659
M3 - Article
AN - SCOPUS:39049096782
VL - 50
SP - 659
EP - 664
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
SN - 0559-8516
IS - 11
ER -