Formation of high quality silicon nitride films using microwave excitation plasma

Akinobu Teramoto; Takashi Aratani; Masaaki Higuchi; Eiji Ikenaga; Masaki Hirayama; Shigetoshi Sugawa; Takeo Hattori; Tadahiro Ohmi

doi:10.3131/jvsj.50.659

Formation of high quality silicon nitride films using microwave excitation plasma

Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi, Eiji Ikenaga, Masaki Hirayama, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

Abstract

The electric characteristics Si₃N₄ films the interface characteristics of Si₃N₄/Si formed by newly developed microwave-excited highdensity plasma are described. The leakage current through the Si₃N₄ films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO₂ films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si₃N₄ films have more excellent performance compared to that with conventional SiO₂ films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si₃N₄/Si interface. The subnitride at Si ₃N₄/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si ₃N₄/Si interface is independent of a silicon wafer surface. Si₃N₄ films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.

Original language	English
Pages (from-to)	659-664
Number of pages	6
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	50
Issue number	11
DOIs	https://doi.org/10.3131/jvsj.50.659
Publication status	Published - 2007

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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Formation of high quality silicon nitride films using microwave excitation plasma. / Teramoto, Akinobu; Aratani, Takashi; Higuchi, Masaaki; Ikenaga, Eiji; Hirayama, Masaki ; Sugawa, Shigetoshi; Hattori, Takeo; Ohmi, Tadahiro.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 50, No. 11, 2007, p. 659-664.

Research output: Contribution to journal › Article › peer-review

@article{b61fab41dfd54a2386d331c02ece90fb,

title = "Formation of high quality silicon nitride films using microwave excitation plasma",

abstract = "The electric characteristics Si3N4 films the interface characteristics of Si3N4/Si formed by newly developed microwave-excited highdensity plasma are described. The leakage current through the Si3N4 films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO2 films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si3N4 films have more excellent performance compared to that with conventional SiO2 films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si3N4/Si interface. The subnitride at Si 3N4/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si 3N4/Si interface is independent of a silicon wafer surface. Si3N4 films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.",

author = "Akinobu Teramoto and Takashi Aratani and Masaaki Higuchi and Eiji Ikenaga and Masaki Hirayama and Shigetoshi Sugawa and Takeo Hattori and Tadahiro Ohmi",

year = "2007",

doi = "10.3131/jvsj.50.659",

language = "English",

volume = "50",

pages = "659--664",

journal = "Shinku/Journal of the Vacuum Society of Japan",

issn = "0559-8516",

number = "11",

}

TY - JOUR

T1 - Formation of high quality silicon nitride films using microwave excitation plasma

AU - Teramoto, Akinobu

AU - Aratani, Takashi

AU - Higuchi, Masaaki

AU - Ikenaga, Eiji

AU - Hirayama, Masaki

AU - Sugawa, Shigetoshi

AU - Hattori, Takeo

AU - Ohmi, Tadahiro

PY - 2007

Y1 - 2007

N2 - The electric characteristics Si3N4 films the interface characteristics of Si3N4/Si formed by newly developed microwave-excited highdensity plasma are described. The leakage current through the Si3N4 films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO2 films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si3N4 films have more excellent performance compared to that with conventional SiO2 films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si3N4/Si interface. The subnitride at Si 3N4/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si 3N4/Si interface is independent of a silicon wafer surface. Si3N4 films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.

AB - The electric characteristics Si3N4 films the interface characteristics of Si3N4/Si formed by newly developed microwave-excited highdensity plasma are described. The leakage current through the Si3N4 films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO2 films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si3N4 films have more excellent performance compared to that with conventional SiO2 films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si3N4/Si interface. The subnitride at Si 3N4/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si 3N4/Si interface is independent of a silicon wafer surface. Si3N4 films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.

UR - http://www.scopus.com/inward/record.url?scp=39049096782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39049096782&partnerID=8YFLogxK

U2 - 10.3131/jvsj.50.659

DO - 10.3131/jvsj.50.659

M3 - Article

AN - SCOPUS:39049096782

VL - 50

SP - 659

EP - 664

JO - Shinku/Journal of the Vacuum Society of Japan

JF - Shinku/Journal of the Vacuum Society of Japan

SN - 0559-8516

IS - 11

ER -