Formation of high quality SiC on Si(100) at 900 °C using monomethylsilane gas-source MBE

H. Nakazawa; M. Suemitsu; S. Asami

Formation of high quality SiC on Si(100) at 900 °C using monomethylsilane gas-source MBE

H. Nakazawa, M. Suemitsu, S. Asami

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Research output: Contribution to journal › Conference article › peer-review

Abstract

We have conducted a systematic series of 3C-SiC/Si(100) gas-source MBE experiments using monomethylsilane (MMS: H₃Si-CH₃), and have obtained growth-temperature and MMS-pressure dependences of the grown film. As a result, an optimum growth temperature was found to exist for each pressure, which decreased with decreasing pressure. The low temperature degradation of the film is related to residual surface hydrogen termination as suggested from H₂-temperature-programmed-desorption observations from MMS-adsorbed Si(100) surfaces. The high temperature degradation is understood by the onset of Si outdiffusion from the substrate into the film. A balance between these two competing processes accounts for the presence of the optimum growth temperature and its pressure dependence as well.

Original language	English
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Formation of high quality SiC on Si(100) at 900 °C using monomethylsilane gas-source MBE",

abstract = "We have conducted a systematic series of 3C-SiC/Si(100) gas-source MBE experiments using monomethylsilane (MMS: H3Si-CH3), and have obtained growth-temperature and MMS-pressure dependences of the grown film. As a result, an optimum growth temperature was found to exist for each pressure, which decreased with decreasing pressure. The low temperature degradation of the film is related to residual surface hydrogen termination as suggested from H2-temperature-programmed-desorption observations from MMS-adsorbed Si(100) surfaces. The high temperature degradation is understood by the onset of Si outdiffusion from the substrate into the film. A balance between these two competing processes accounts for the presence of the optimum growth temperature and its pressure dependence as well.",

author = "H. Nakazawa and M. Suemitsu and S. Asami",

note = "Copyright: Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.; ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

year = "2000",

language = "English",

volume = "338",

pages = "I/--",

journal = "Materials Science Forum",

issn = "0255-5476",

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TY - JOUR

T1 - Formation of high quality SiC on Si(100) at 900 °C using monomethylsilane gas-source MBE

AU - Nakazawa, H.

AU - Suemitsu, M.

AU - Asami, S.

PY - 2000

Y1 - 2000

N2 - We have conducted a systematic series of 3C-SiC/Si(100) gas-source MBE experiments using monomethylsilane (MMS: H3Si-CH3), and have obtained growth-temperature and MMS-pressure dependences of the grown film. As a result, an optimum growth temperature was found to exist for each pressure, which decreased with decreasing pressure. The low temperature degradation of the film is related to residual surface hydrogen termination as suggested from H2-temperature-programmed-desorption observations from MMS-adsorbed Si(100) surfaces. The high temperature degradation is understood by the onset of Si outdiffusion from the substrate into the film. A balance between these two competing processes accounts for the presence of the optimum growth temperature and its pressure dependence as well.

AB - We have conducted a systematic series of 3C-SiC/Si(100) gas-source MBE experiments using monomethylsilane (MMS: H3Si-CH3), and have obtained growth-temperature and MMS-pressure dependences of the grown film. As a result, an optimum growth temperature was found to exist for each pressure, which decreased with decreasing pressure. The low temperature degradation of the film is related to residual surface hydrogen termination as suggested from H2-temperature-programmed-desorption observations from MMS-adsorbed Si(100) surfaces. The high temperature degradation is understood by the onset of Si outdiffusion from the substrate into the film. A balance between these two competing processes accounts for the presence of the optimum growth temperature and its pressure dependence as well.

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M3 - Conference article

AN - SCOPUS:0033699750

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Formation of high quality SiC on Si(100) at 900 °C using monomethylsilane gas-source MBE

Abstract

ASJC Scopus subject areas

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