Abstract
High-quality octahedral and flattened diamond crystals have been successfully synthesized using the inert-gas curtain combustion method on amorphous SiC (a-SiC) film preformed on Si substrates. The number density and the diameter of the diamond crystals were controlled by the a-SiC film thickness, while their morphology varied with the growth temperature. Flattened diamonds appeared at lower deposition temperatures. SEM and Raman observations indicate excellent crystallinity of these diamonds.
| Original language | English |
|---|---|
| Pages (from-to) | 183-189 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 183 |
| Issue number | 1-2 |
| Publication status | Published - 1998 Jan 1 |
Keywords
- Combustion flame method
- Flattened diamond
- Raman
- SEM
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry