TY - GEN
T1 - FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.
AU - Ohmi, Tadahiro
AU - Kuromiya, Shigeru
AU - Yoshitake, Syunji
AU - Iwabuchi, Hiroshi
AU - Sato, Genichi
AU - Murota, Junichi
PY - 1987/12/1
Y1 - 1987/12/1
N2 - An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.
AB - An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.
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M3 - Conference contribution
AN - SCOPUS:0023568690
SN - 4930813212
T3 - Conference on Solid State Devices and Materials
SP - 239
EP - 242
BT - Conference on Solid State Devices and Materials
PB - Japan Soc of Applied Physics
ER -