FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

Tadahiro Ohmi; Shigeru Kuromiya; Syunji Yoshitake; Hiroshi Iwabuchi; Genichi Sato; Junichi Murota

FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

Tadahiro Ohmi, Shigeru Kuromiya, Syunji Yoshitake, Hiroshi Iwabuchi, Genichi Sato, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Japan Soc of Applied Physics
Pages	239-242
Number of pages	4
ISBN (Print)	4930813212
Publication status	Published - 1987 Dec 1

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

Cite this

FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY. / Ohmi, Tadahiro; Kuromiya, Shigeru; Yoshitake, Syunji et al.

Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 239-242 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{767867564af843cbb19792e29acde5a4,

title = "FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.",

abstract = "An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.",

author = "Tadahiro Ohmi and Shigeru Kuromiya and Syunji Yoshitake and Hiroshi Iwabuchi and Genichi Sato and Junichi Murota",

year = "1987",

month = dec,

day = "1",

language = "English",

isbn = "4930813212",

series = "Conference on Solid State Devices and Materials",

publisher = "Japan Soc of Applied Physics",

pages = "239--242",

booktitle = "Conference on Solid State Devices and Materials",

}

TY - GEN

T1 - FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

AU - Ohmi, Tadahiro

AU - Kuromiya, Shigeru

AU - Yoshitake, Syunji

AU - Iwabuchi, Hiroshi

AU - Sato, Genichi

AU - Murota, Junichi

PY - 1987/12/1

Y1 - 1987/12/1

N2 - An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.

AB - An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0023568690&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023568690&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023568690

SN - 4930813212

T3 - Conference on Solid State Devices and Materials

SP - 239

EP - 242

BT - Conference on Solid State Devices and Materials

PB - Japan Soc of Applied Physics

ER -

FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

Abstract

Publication series

ASJC Scopus subject areas

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