FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

Tadahiro Ohmi, Shigeru Kuromiya, Syunji Yoshitake, Hiroshi Iwabuchi, Genichi Sato, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages239-242
Number of pages4
ISBN (Print)4930813212
Publication statusPublished - 1987 Dec 1

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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