FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

Tadahiro Ohmi; Shigeru Kuromiya; Syunji Yoshitake; Hiroshi Iwabuchi; Genichi Sato; Junichi Murota

FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY.

Tadahiro Ohmi, Shigeru Kuromiya, Syunji Yoshitake, Hiroshi Iwabuchi, Genichi Sato, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

An ultra clean CVD (Chemical Vapor Deposition) epitaxial growth system was developed to grow high quality epitaxial silicon films. Introduction of newly-developed ultra high vacuum compatible reactor having carbon susceptor with minimized contamination as well as an electrostatic wafer chucking/transfer mechanism working in high vacuum realized an ultra clean environment for epitaxy. As a result, defect-free epitaxial silicon films were obtained at low temperatures of less than 900 degree C, when substrates were heat-treated under the ultra high vacuum before epitaxial growth. The generation lifetime and the carrier concentration of epitaxial films grown in this system were typically 4. 7 msec and 8 multiplied by 10**1**2cm** minus **3, respectively.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Japan Soc of Applied Physics
Pages	239-242
Number of pages	4
ISBN (Print)	4930813212
Publication status	Published - 1987 Dec 1

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

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FORMATION OF HIGH QUALITY EPITAXIAL SILICON FILMS BY ULTRA CLEAN TECHNOLOGY. / Ohmi, Tadahiro; Kuromiya, Shigeru; Yoshitake, Syunji; Iwabuchi, Hiroshi; Sato, Genichi; Murota, Junichi.

Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 239-242 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Yoshitake, Syunji

AU - Iwabuchi, Hiroshi

AU - Sato, Genichi

AU - Murota, Junichi

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