We present a high quality epitaxial layer formation on boron diffused layer in FZ-silicon. This epitaxial layer has been successfully applied to obtaining a high reverse gate voltage of GTO. The test-sample GTO having a high reverse gate voltage of 100V is demonstrated to realize high peak turn off current and short turn-off time.
|Number of pages||6|
|Journal||Proceedings of the International Symposium on Power Semiconductor Devices and ICs|
|Publication status||Published - 1992 Jan 1|
|Event||4th International Symposium on Power Semiconductor Devices and Ics, ISPSD 1992 - Tokyo, Japan|
Duration: 1992 May 19 → 1992 May 21
ASJC Scopus subject areas