Formation of high quality epitaxial layer for an improved GTO

M. Watanabe, Y. Takahashi, O. Yamada, S. Tagami, H. Kirihata

Research output: Contribution to journalConference articlepeer-review

Abstract

We present a high quality epitaxial layer formation on boron diffused layer in FZ-silicon. This epitaxial layer has been successfully applied to obtaining a high reverse gate voltage of GTO. The test-sample GTO having a high reverse gate voltage of 100V is demonstrated to realize high peak turn off current and short turn-off time.

Original languageEnglish
Article number991244
Pages (from-to)98-103
Number of pages6
JournalProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume1992-May
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes
Event4th International Symposium on Power Semiconductor Devices and Ics, ISPSD 1992 - Tokyo, Japan
Duration: 1992 May 191992 May 21

ASJC Scopus subject areas

  • Engineering(all)

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