Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application

Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

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12 Citations (Scopus)

Abstract

In this letter, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated. In this method, tungsten and silicon nitride are cosputtered in high vacuum rf sputtering equipment. The W-NDs with small diameters (1-1.5 nm) and high density (∼1.3× 1013 / cm2) were achieved easily by controlling W composition; this is the ratio of total area of W chips to that of silicon nitride target. The metal-oxide-semiconductor memory device was fabricated with high density W-NDs floating gate and high- k HfO2 blocking dielectric. A wide range memory window (0-29 V) was obtained after bidirectional gate voltages sweeping with range of ±1-±23 V. It is feasible to design the memory window with propriety power consumption for nonvolatile memory application.

Original languageEnglish
Article number063108
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
Publication statusPublished - 2009 Feb 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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