Formation of heavily P-doped Si epitaxial film on Si(1 0 0) by multiple atomic-layer doping technique

Yosuke Shimamune, Masao Sakuraba, Junichi Murota, Bernd Tillack

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Phosphorus (P) incorporation process during Si epitaxial growth by SiH 4 reaction in ultraclean low-pressure chemical vapor deposition (CVD) and the electrical characteristics of the heavily P-doped epitaxial Si film on Si(1 0 0) have been investigated. Si layer growth on the P layer formed on Si(1 0 0) at 500°C at SiH 4 partial pressure of 6 Pa is observed when the surface P amount becomes below 7 × 10 14 cm -2 . It is also found that about 1.1 × 10 14 cm -2 P atoms segregate onto the Si surface and the other desorbs. On the other hand, by lowering the Si growth temperature to 450°C and increase in the SiH 4 partial pressure to 220 Pa, P incorporation occurs and about 1.5 × 10 14 cm -2 P atoms are buried at the initial position without segregation. By using the multiple atomic-layer doping technique, very low-resistive heavily P-doped epitaxial Si film on Si(1 0 0) can be formed with effective suppression of the electrically inactive P formation.

Original languageEnglish
Pages (from-to)202-205
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Chemical vapor deposition
  • P doping
  • PH
  • Si epitaxial growth
  • SiH

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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