TY - JOUR
T1 - Formation of Ge oxide film by neutral beam postoxidation using Al metal film
AU - Ohno, Takeo
AU - Nakayama, Daiki
AU - Okada, Takeru
AU - Samukawa, Seiji
N1 - Funding Information:
Acknowledgments This work was partly supported by the NIMS Nanofabrication Platform of the Nanotechnology Platform Project sponsored by MEXT, Japan.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/4
Y1 - 2016/4
N2 - A low-temperature neutral beam postoxidation process using an aluminum (Al) metal film was used to obtain a high-quality germanium (Ge) oxide film. After the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 28.5% Ge dioxide (GeO2) content was realized by controlling the acceleration bias power of the neutral oxygen beam. We also confirmed that the fabricated Au/AlOx/GeOx/Ge/Al MOS gate structure shows an equivalent oxide thickness (EOT) of 2.8 nm. This result demonstrates the great potential of neutral beam postoxidation for fabricating high-performance Ge MOS transistors.
AB - A low-temperature neutral beam postoxidation process using an aluminum (Al) metal film was used to obtain a high-quality germanium (Ge) oxide film. After the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 28.5% Ge dioxide (GeO2) content was realized by controlling the acceleration bias power of the neutral oxygen beam. We also confirmed that the fabricated Au/AlOx/GeOx/Ge/Al MOS gate structure shows an equivalent oxide thickness (EOT) of 2.8 nm. This result demonstrates the great potential of neutral beam postoxidation for fabricating high-performance Ge MOS transistors.
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U2 - 10.7567/JJAP.55.04EJ03
DO - 10.7567/JJAP.55.04EJ03
M3 - Article
AN - SCOPUS:84963706332
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04EJ03
ER -