Formation of ge nanodots capped with SiC layer by gas-source MBE using MMGe and MMSi

K. Yasui, Y. Anezaki, K. Sato, A. Kato, T. Kato, Maki Suemitsu, Y. Narita, H. Nakazawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

(Review) Ge nanodots were formed on Si(001) 2-off substrates after formation of a Si-c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. Surface structures of the Ge nanodots were measured using reflection highenergy electron diffraction and scanning tunneling microscopy. Photoluminescence spectra of the Ge nanodots capped with SiC layers measured at low temperature exhibited intense peaks around 1.07 and 1.01 eV, which are considered to be originated from the Ge(GeCx) nanodots.

Original languageEnglish
Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Pages171-177
Number of pages7
Edition6
DOIs
Publication statusPublished - 2012 Dec 1
EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number6
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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