Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top

Yuhki Itoh; Shinji Hatakeyama; Tomoyuki Kawashima; Katsuyoshi Washio

doi:10.1016/j.jcrysgro.2015.05.022

Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top

Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (T_A) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at T_A=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.

Original language	English
Pages (from-to)	61-65
Number of pages	5
Journal	Journal of Crystal Growth
Volume	426
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.05.022
Publication status	Published - 2015 Jun 6

Keywords

A1. Low dimensional structures
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting germanium

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top",

abstract = "To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.",

keywords = "A1. Low dimensional structures, A1. Nanostructures, A3. Molecular beam epitaxy, B2. Semiconducting germanium",

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T1 - Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top

AU - Itoh, Yuhki

AU - Hatakeyama, Shinji

AU - Kawashima, Tomoyuki

AU - Washio, Katsuyoshi

PY - 2015/6/6

Y1 - 2015/6/6

N2 - To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.

AB - To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.

KW - A1. Low dimensional structures

KW - A1. Nanostructures

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting germanium

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