Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top

Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.

Original languageEnglish
Pages (from-to)61-65
Number of pages5
JournalJournal of Crystal Growth
Volume426
DOIs
Publication statusPublished - 2015 Jun 6

Keywords

  • A1. Low dimensional structures
  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • B2. Semiconducting germanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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