TY - JOUR
T1 - Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top
AU - Itoh, Yuhki
AU - Hatakeyama, Shinji
AU - Kawashima, Tomoyuki
AU - Washio, Katsuyoshi
N1 - Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/6/6
Y1 - 2015/6/6
N2 - To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.
AB - To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.
KW - A1. Low dimensional structures
KW - A1. Nanostructures
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting germanium
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U2 - 10.1016/j.jcrysgro.2015.05.022
DO - 10.1016/j.jcrysgro.2015.05.022
M3 - Article
AN - SCOPUS:84930668335
VL - 426
SP - 61
EP - 65
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -