Abstract
To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450 °C. Small, dense and relatively uniform dots were formed for Ge=7.5 MLs and C=0.05-0.1 ML at TA=650 °C. From the dependence of dot size and density on Ge thickness and C coverage, the effect of C is considered to decrease in bulk free energy of Ge in nucleation process, that is, C led to reduce nucleation barrier height and to decrease critical radius.
Original language | English |
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Pages (from-to) | 61-65 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 426 |
DOIs | |
Publication status | Published - 2015 Jun 6 |
Keywords
- A1. Low dimensional structures
- A1. Nanostructures
- A3. Molecular beam epitaxy
- B2. Semiconducting germanium
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry