TY - JOUR
T1 - Formation of GaN films by Ga Ion direct deposition under nitrogen radical atmosphere
AU - Toda, Masaya
AU - Yanagisawa, Junichi
AU - Gamo, Kenji
AU - Akasaka, Yoichi
N1 - Funding Information:
The authors would like to thank Y. Yuba for useful discussions and K. Kawasaki for his technical assistance. This work was supported in part by Grant-in-Aid for Scientific Research (C) (14550300) and the 21st Century COE Program of Japan Society for the Promotion of Science. One of the authors (J. Y.) is also grateful to the Murata Science Foundation for financial support.
PY - 2004/11
Y1 - 2004/11
N2 - Formation of hydrogen-free gallium nitride (GaN) thin layers by ion beam direct deposition method under nitrogen ambient was investigated. After a Ga ion beam at an energy of 100 eV was irradiated on a chip of a Si(111) wafer under a nitrogen gas pressure of 2×10-4 Torr using a tungsten hot filament, the composition and the chemical bonding nature of the deposited materials were investigated by x-ray photoelectron spectroscopy (XPS). Although the deposited material using a filament power of 250 W showed almost the metallic gallium nature, the XPS spectra of the deposited Ga using the hot filament at a power of 300 W was very similar to that of an epitaxially grown GaN reference, indicating the possibility of the formation of GaN thin layer using the present method. Because the pure N2 gas was used as the nitrogen source, no impurity fragments should be incorporated in the deposited materials. As a result, it is shown that the formation of hydrogen-free GaN layers is possible by Ga ion beam direct deposition under nitrogen atmosphere using N2 gas and the hot filament.
AB - Formation of hydrogen-free gallium nitride (GaN) thin layers by ion beam direct deposition method under nitrogen ambient was investigated. After a Ga ion beam at an energy of 100 eV was irradiated on a chip of a Si(111) wafer under a nitrogen gas pressure of 2×10-4 Torr using a tungsten hot filament, the composition and the chemical bonding nature of the deposited materials were investigated by x-ray photoelectron spectroscopy (XPS). Although the deposited material using a filament power of 250 W showed almost the metallic gallium nature, the XPS spectra of the deposited Ga using the hot filament at a power of 300 W was very similar to that of an epitaxially grown GaN reference, indicating the possibility of the formation of GaN thin layer using the present method. Because the pure N2 gas was used as the nitrogen source, no impurity fragments should be incorporated in the deposited materials. As a result, it is shown that the formation of hydrogen-free GaN layers is possible by Ga ion beam direct deposition under nitrogen atmosphere using N2 gas and the hot filament.
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U2 - 10.1116/1.1808733
DO - 10.1116/1.1808733
M3 - Article
AN - SCOPUS:13244292693
VL - 22
SP - 3012
EP - 3015
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 6
ER -