Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer

H. Nakazawa, M. Suemitsu

Research output: Contribution to journalArticle

Abstract

We have successfully grown extremely thin, quasi-single-domain SC-SiC films on resistively heated on-aixs Si(001) substrate by forming a low-temperature interfacial buffer layer using monomethylsilane (CH3-SiH 3). The thickness of the film is as thin as 45-100 nm, which is compared to that required in a previous study (>5 /mi). Both the Si(001)2×1 single-domain and the Si(001)2× 1+1×2 double-domain surfaces were found to successfully yield quasi-single-domain 3C-SiC(001)2×3 films. The observed development of the single domain is understood in terms of the electromigration during resistive heating as well as the unique adsorption nature of the monomethylsilane.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
DOIs
Publication statusPublished - 2002 Jan 1

Keywords

  • Antiphase boundary
  • Gas-source molecular beam epitaxy
  • Low-temperature interfacial buffer layer
  • Monomethylsilane

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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