Formation of extremely high-aspect Si sub-micron patterns with smooth wall for MEMS and X-ray devices

Hayato Komatsu, Wataru Yashiro, Hidemi Kato, Johji Kagami, Kentaro Totsu, Masashi Nakao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Sub-micron wide Si rib patterns with a smooth sidewall and a high aspect ratio have been successfully formed using originally developed dry-etching apparatus with a high-density inductive coupled plasma source. The developed technique is applied for MEMS and X-ray devices.

Original languageEnglish
Title of host publication2017 International Conference on Electronics Packaging, ICEP 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages487-490
Number of pages4
ISBN (Electronic)9784990218836
DOIs
Publication statusPublished - 2017 Jun 5
Event2017 International Conference on Electronics Packaging, ICEP 2017 - Tendo, Yamagata, Japan
Duration: 2017 Apr 192017 Apr 22

Publication series

Name2017 International Conference on Electronics Packaging, ICEP 2017

Other

Other2017 International Conference on Electronics Packaging, ICEP 2017
CountryJapan
CityTendo, Yamagata
Period17/4/1917/4/22

Keywords

  • ICP-RIE
  • MEMS
  • X-ray devices
  • high aspect Si patterns
  • imprint
  • metallic glasss
  • smooth sidewall

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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