Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation

J. Kikkawa, J. Yamasaki, Yutaka Ohno, M. Kohyama, S. Takeda

Research output: Contribution to journalConference article

Abstract

We examined effects of electron irradiation (2 MeV, 8 × 10 19 e·cm-2·s-1) in a crystalline part of polycrystalline Si0.915Ge0.085 in comparison to crystalline Si at 300, 583 and 688 K. We found two characteristic phenomena. One is that larger {113} planar defects are formed in high temperature in Si, but in addition to those defects smaller defects are formed near the surface only in Si0.915Ge0.085. The other is that the growth rate of {113} planar defects in Si0.915Ge0.085 is larger compared to that in Si and highly affected by temperature. We analyze the phenomena in this paper.

Original languageEnglish
Pages (from-to)361-366
Number of pages6
JournalSolid State Phenomena
Volume93
Publication statusPublished - 2003 Jan 1
Externally publishedYes
EventPolycrystalline Semiconductors VII - Nara, United States
Duration: 2003 Sep 102003 Sep 13

Keywords

  • Electron Irradiation
  • Interstitial
  • Silicon
  • Silicon Germanium
  • {113} Defect

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kikkawa, J., Yamasaki, J., Ohno, Y., Kohyama, M., & Takeda, S. (2003). Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation. Solid State Phenomena, 93, 361-366.