Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation

J. Kikkawa, J. Yamasaki, Y. Ohno, M. Kohyama, S. Takeda

Research output: Contribution to journalConference articlepeer-review


We examined effects of electron irradiation (2 MeV, 8 × 10 19 e·cm-2·s-1) in a crystalline part of polycrystalline Si0.915Ge0.085 in comparison to crystalline Si at 300, 583 and 688 K. We found two characteristic phenomena. One is that larger {113} planar defects are formed in high temperature in Si, but in addition to those defects smaller defects are formed near the surface only in Si0.915Ge0.085. The other is that the growth rate of {113} planar defects in Si0.915Ge0.085 is larger compared to that in Si and highly affected by temperature. We analyze the phenomena in this paper.

Original languageEnglish
Pages (from-to)361-366
Number of pages6
JournalSolid State Phenomena
Publication statusPublished - 2003
Externally publishedYes
EventPolycrystalline Semiconductors VII - Nara, United States
Duration: 2003 Sep 102003 Sep 13


  • Electron Irradiation
  • Interstitial
  • Silicon
  • Silicon Germanium
  • {113} Defect

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics


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