On H-terminated Si(100)-2×1 surface, dihydride chains are often observed along the SB step edge by scanning tunneling microscopy. They are located more than one Si dimer's distance from the step edge. To clarify the reason, we performed first principles calculations on the chain formation process. We found that H termination of the Si surface transforms the rebonded step edge into the combination of a dihydride chain and a nonrebonded step edge. The chain moves away from the step edge by changing positions with the neighboring Si-dimer row. We also investigated the reaction path of this exchange and found that it requires an additional hydrogen atom, which is available during the H-termination process.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2006 Nov 15|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics