Abstract
Epitaxial cubic(c)-AlN(1 0 0) layer has been formed at an interface between hexagonal(h)-AlN film and MgO(1 0 0) substrate by molecular beam epitaxy assisted with electron-cyclotron-resonance plasma excitation. The c-AlN layer observed by TEM was as thin as 3-4 nm. The h-AlN film was 〈1 0 1〉-oriented polycrystalline. On the other hand, epitaxial h-AlN(0 0 1) film has been grown directly on MgO(1 1 1) substrate with the epitaxial relationships of AlN[0 1 0] ∥ MgO[1 1 2] and A1N[2 1 0] ∥ MgO[1 1 0].
Original language | English |
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Pages (from-to) | 452-456 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 189-190 |
DOIs | |
Publication status | Published - 1998 Jun 15 |
Keywords
- AlN
- Ion-assisted MBE
- MgO
- RHEED
- TEM
- Thin film
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry