Formation of cubic-AlN layer on MgO(1 0 0) substrate

Soichiro Okubo, Noriyoshi Shibata, Tomohiro Saito, Yuichi Ikuhara

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    23 Citations (Scopus)

    Abstract

    Epitaxial cubic(c)-AlN(1 0 0) layer has been formed at an interface between hexagonal(h)-AlN film and MgO(1 0 0) substrate by molecular beam epitaxy assisted with electron-cyclotron-resonance plasma excitation. The c-AlN layer observed by TEM was as thin as 3-4 nm. The h-AlN film was 〈1 0 1〉-oriented polycrystalline. On the other hand, epitaxial h-AlN(0 0 1) film has been grown directly on MgO(1 1 1) substrate with the epitaxial relationships of AlN[0 1 0] ∥ MgO[1 1 2] and A1N[2 1 0] ∥ MgO[1 1 0].

    Original languageEnglish
    Pages (from-to)452-456
    Number of pages5
    JournalJournal of Crystal Growth
    Volume189-190
    DOIs
    Publication statusPublished - 1998 Jun 15

    Keywords

    • AlN
    • Ion-assisted MBE
    • MgO
    • RHEED
    • TEM
    • Thin film

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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