For the MR enhancement in current perpendicular to plane-giant magetoresistance spin valve (CPP-GMR SV), a current-confined path-nano-oxide layer (CCP-NOL)-AlOx was formed on the Cu spacer of half SV structure. In order to form effective current-confining paths, an ultra-thin AlOx layer was deposited on a Cu spacer layer by O2 reactive sputtering of Al with infra-red (IR) heat treatment on the substrate, and that enable to form an island-structured insulating AlOx layer having holes between AlOx islands. By controlling PO2 and substrate temperature in the NOL deposition, AlOx layer formation without an oxidizing bottom layer could be achieved.
- CCP-GMR spin valves
- Conducting AFM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics