Formation of CCP-NOL in CPP-GMR spin valve structure for the enhancement of magnetoresistance

Y. M. Kang, S. Isogami, M. Tsunoda, Migaku Takahashi, S. I. Yoo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

For the MR enhancement in current perpendicular to plane-giant magetoresistance spin valve (CPP-GMR SV), a current-confined path-nano-oxide layer (CCP-NOL)-AlOx was formed on the Cu spacer of half SV structure. In order to form effective current-confining paths, an ultra-thin AlOx layer was deposited on a Cu spacer layer by O2 reactive sputtering of Al with infra-red (IR) heat treatment on the substrate, and that enable to form an island-structured insulating AlOx layer having holes between AlOx islands. By controlling PO2 and substrate temperature in the NOL deposition, AlOx layer formation without an oxidizing bottom layer could be achieved.

Original languageEnglish
Pages (from-to)1911-1913
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

Keywords

  • CCP-GMR spin valves
  • CCP-NOL
  • Conducting AFM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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