Formation of Al/(Ti, Nb, Ta)-composite oxide films on aluminum by pore filling

M. Shikanai, M. Sakairi, H. Takahashi, M. Seo, K. Takahiro, S. Nagata, S. Yamaguchi

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

Aluminum specimens coated with porous anodic oxide films were dipped in solutions containing Ti4+, Nb5+, or Ta5+ ions and heated in air mainly at 400°C to deposit Ti, Nb or Ta oxide on the inner walls of pores. After 0 to 7 cycles of the dipping and heating process, the specimens were reanodized in a neutral borate solution to fill the pores with Al2U3. The incorporation of Ti, Nb, or Ta oxide in the anodic oxide films was examined by transmission electron microscopy, Rutherford backscattering spectroscopy, and impedance measurements. Incorporation of Ti, Nb, or Ta oxide was found only in the outermost part of the anodic oxide film after reanodizing up to 400 V. The Al/Ti composite oxide films consisted an outer Al/Ti-composite oxide layer, an intermediate crystalline alumina layer, and an inner amorphous alumina layer while the Al/Nb- and Al/Ta-composite oxide films consisted of an outer composite oxide layer and an inner amorphous alumina layer. The parallel electric capacitance of Al/Ti-composite oxide film was 40% higher than those of the other two due to its small thickness and high dielectric constant. The formation mechanisms of the composite oxide films during reanodizing are discussed in terms of the ion transport across the oxide film.

Original languageEnglish
Pages (from-to)2756-2766
Number of pages11
JournalJournal of the Electrochemical Society
Volume144
Issue number8
DOIs
Publication statusPublished - 1997 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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